Gate-controlled reversible rectifying behaviour in tunnel contacted atomically-thin MoS2 transistor

Abstract Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integratio...

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Bibliographic Details
Published in:	Nature communications 2017-10, Vol.8 (1), p.1-7, Article 970
Main Authors:	Li, Xiao-Xi, Fan, Zhi-Qiang, Liu, Pei-Zhi, Chen, Mao-Lin, Liu, Xin, Jia, Chuan-Kun, Sun, Dong-Ming, Jiang, Xiang-Wei, Han, Zheng, Bouchiat, Vincent, Guo, Jun-Jie, Chen, Jian-Hao, Zhang, Zhi-Dong
Format:	Article
Language:	eng
Subjects:	Boron Boron nitride Chemical potential Fabrication Heterostructures Molybdenum disulfide Nanoelectronics Physics Stacking Switches Transistors
Online Access:	Get full text
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Summary:	Abstract Atomically thin two-dimensional semiconducting materials integrated into van der Waals heterostructures have enabled architectures that hold great promise for next generation nanoelectronics. However, challenges still remain to enable their applications as compliant materials for integration in logic devices. Here, we devise a reverted stacking technique to intercalate a wrinkle-free boron nitride tunnel layer between MoS 2 channel and source drain electrodes. Vertical tunnelling of electrons therefore makes it possible to suppress the Schottky barriers and Fermi level pinning, leading to homogeneous gate-control of the channel chemical potential across the bandgap edges. The observed features of ambipolar pn to np diode, which can be reversibly gate tuned, paves the way for future logic applications and high performance switches based on atomically thin semiconducting channel.
ISSN:	2041-1723 2041-1723