InGaN as a Substrate for AC Photoelectrochemical Imaging

AC photoelectrochemical imaging at electrolyte–semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentall...

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Bibliographic Details
Published in:	Sensors (Basel, Switzerland) Switzerland), 2019-10, Vol.19 (20), p.4386
Main Authors:	Zhou, Bo, Das, Anirban, Kappers, Menno J., Oliver, Rachel A., Humphreys, Colin J., Krause, Steffi
Format:	Article
Language:	eng
Subjects:	Alternating current cell imaging Dark current Electrical impedance Electrodes Electrolytes Indium Indium gallium nitrides ingan/gan epilayer Investigations Lasers Light light-activated electrochemistry light-addressable potentiometric sensor Medical imaging Nanowires Nitrogen Photoelectric effect Photoelectric emission photoelectrochemistry Semiconductor lasers Semiconductors Sensors Silicon Substrates Thin films
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Summary:	AC photoelectrochemical imaging at electrolyte–semiconductor interfaces provides spatially resolved information such as surface potentials, ion concentrations and electrical impedance. In this work, thin films of InGaN/GaN were used successfully for AC photoelectrochemical imaging, and experimentally shown to generate a considerable photocurrent under illumination with a 405 nm modulated diode laser at comparatively high frequencies and low applied DC potentials, making this a promising substrate for bioimaging applications. Linear sweep voltammetry showed negligible dark currents. The imaging capabilities of the sensor substrate were demonstrated with a model system and showed a lateral resolution of 7 microns.
ISSN:	1424-8220 1424-8220