Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Charge-noise spectroscopy of Si/SiGe quantum dots via dynamically-decoupled exchange oscillations

Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these dev...

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Bibliographic Details
Published in:Nature communications 2022-02, Vol.13 (1), p.940-940, Article 940
Main Authors: Connors, Elliot J, Nelson, J, Edge, Lisa F, Nichol, John M
Format: Article
Language:eng
Subjects:
Accuracy
Coherence length
Electron spin
Electrons
Fabrication
Fidelity
Frequency ranges
Noise
Noise control
Noise measurement
Oscillations
Quantum dots
Qubits (quantum computing)
Silicon
Silicon germanides
Spectroscopy
Spectrum analysis
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Summary:Electron spins in silicon quantum dots are promising qubits due to their long coherence times, scalable fabrication, and potential for all-electrical control. However, charge noise in the host semiconductor presents a major obstacle to achieving high-fidelity single- and two-qubit gates in these devices. In this work, we measure the charge-noise spectrum of a Si/SiGe singlet-triplet qubit over nearly 12 decades in frequency using a combination of methods, including dynamically-decoupled exchange oscillations with up to 512 π pulses during the qubit evolution. The charge noise is colored across the entire frequency range of our measurements, although the spectral exponent changes with frequency. Moreover, the charge-noise spectrum inferred from conductance measurements of a proximal sensor quantum dot agrees with that inferred from coherent oscillations of the singlet-triplet qubit, suggesting that simple transport measurements can accurately characterize the charge noise over a wide frequency range in Si/SiGe quantum dots.
ISSN:2041-1723
2041-1723