DC temperature measurements for power gain monitoring in RF power amplifiers

In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature se...

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Bibliographic Details
Main Authors: Altet, J., Mateo, D., Gomez, D., Perpina, X., Vellvehi, M., Jorda, X.
Format: Conference Proceeding
Language:English
Subjects:
Amplificadors de potència
Couplings
Enginyeria electrònica
Microelectrònica
Power amplifiers
Radio frequency
Silicon
Temperature measurement
Temperature sensors
Transducers
Àrees temàtiques de la UPC
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Description
Summary:In this paper we demonstrate that the steady state temperature increase due to the power dissipated by the circuit under test can be used as observable to test the gain of a 2GHz linear class A Power Amplifier. As a proof of concept, we use two strategies to monitor the temperature: a temperature sensor embedded within the same silicon die, which can be used for a BIST approach, and an Infra Red camera, with applications to failure analysis and product debugging.
ISSN:1089-3539
2378-2250
DOI:10.1109/TEST.2012.6401589