Laser-fired contact optimization in c-Si solar cells

ABSTRACT In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically us...

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Bibliographic Details
Published in:Progress in photovoltaics 2012-03, Vol.20 (2), p.173-180
Main Authors: Ortega, P., Orpella, A., Martín, I., Colina, M., López, G., Voz, C., Sánchez, M. I., Molpeceres, C., Alcubilla, R.
Format: Article
Language:English
Subjects:
Aluminum oxide
Applied sciences
Contact
Cèl·lules solars
Deposition
Energia solar
Energia solar fotovoltaica
Energies
Energy
Exact sciences and technology
laser-fired contact
Lasers
Natural energy
Passivation
passivation layer
PERC solar cell
Photovoltaic cells
Photovoltaic conversion
Photovoltaic effect
Process parameters
Solar cells
Solar cells. Photoelectrochemical cells
Solar energy
specific contact resistance
spreading resistance
Àrees temàtiques de la UPC
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Summary:ABSTRACT In this work we study the optimization of laser‐fired contact (LFC) processing parameters, namely laser power and number of pulses, based on the electrical resistance measurement of an aluminum single LFC point. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermally grown silicon oxide (SiO2), deposited phosphorus‐doped amorphous silicon carbide (a‐SiCx/H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx/H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65–3 mΩ cm2 have been obtained. Copyright © 2011 John Wiley & Sons, Ltd. This work studies the optimization of laser‐fired contact (LFC) processing parameters. LFC process has been made through four passivation layers that are typically used in c‐Si and mc‐Si solar cell fabrication: thermal silicon oxide (SiO2), deposited phosphorus‐doped amorphous silicon carbide (a‐SiCx:H(n)), aluminum oxide (Al2O3) and silicon nitride (SiNx:H) films. Values for the LFC resistance normalized by the laser spot area in the range of 0.65‐3mΩcm2 have been obtained.
ISSN:1062-7995
1099-159X
DOI:10.1002/pip.1115