Effect of trichloroethylene enhancement on deposition rate of low-temperature silicon oxide films by silicone oil and ozone

A low-temperature silcon oxide film was deposited at 160 to 220 °C using an atmospheric pressure CVD system with silicone oil vapor and ozone gases. It was found that the deposition rate is markedly increased by adding trichloroethylene (TCE) vapor, which is generated by bubbling TCE solution with N...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2017-08, Vol.56 (8), p.88003
Main Authors: Horita, Susumu, Jain, Puneet
Format: Article
Language:English
Subjects:
Bubbling
Deposition
Fourier transforms
Gas flow
Infrared spectra
Low temperature
Natural gas
Oxide coatings
Ozone
Silicon oxides
Trichloroethylene
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Summary:A low-temperature silcon oxide film was deposited at 160 to 220 °C using an atmospheric pressure CVD system with silicone oil vapor and ozone gases. It was found that the deposition rate is markedly increased by adding trichloroethylene (TCE) vapor, which is generated by bubbling TCE solution with N2 gas flow. The increase is more than 3 times that observed without TCE, and any contamination due to TCE is hardly observed in the deposited Si oxide films from Fourier transform infrared spectra.
ISSN:0021-4922
1347-4065
DOI:10.7567/JJAP.56.088003