Two-color surface-emitting lasers using a semiconductor coupled multilayer cavity

Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) multilayers. InGaAs multiple quantum wells (MQWs) with two different well widths were introduced only in the upper cavity,...

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Bibliographic Details
Published in:Applied physics express 2016-11, Vol.9 (11), p.111201
Main Authors: Kitada, Takahiro, Ota, Hiroto, Lu, Xiangmeng, Kumagai, Naoto, Isu, Toshiro
Format: Article
Language:English
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Summary:Two-color surface-emitting lasers were demonstrated, employing a GaAs/AlGaAs coupled multilayer cavity composed of two cavity layers and three distributed Bragg reflector (DBR) multilayers. InGaAs multiple quantum wells (MQWs) with two different well widths were introduced only in the upper cavity, and sandwiched between p- and n-type DBRs. This current-injection type device exhibited two-color lasing in the near-infrared region under room temperature pulsed conditions. Two-color lasing was achieved when the lower cavity had an optimal thickness relative to the upper cavity thickness and the MQW emission properties.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.9.111201