Pinpoint operando analysis of the electronic states of a graphene transistor using photoelectron nanospectroscopy

Graphene is a promising material for next-generation devices owing to its excellent electronic properties. Graphene devices do not, however, exhibit the high performance that is expected considering graphene's intrinsic electronic properties. Operando, i.e., gate-controlled, photoelectron nanos...

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Bibliographic Details
Published in:Applied physics express 2014-06, Vol.7 (6), p.65101
Main Authors: Fukidome, Hirokazu, Nagashio, Kousuke, Nagamura, Naoka, Tashima, Keiichiro, Funakubo, Kazutoshi, Horiba, Koji, Suemitsu, Maki, Toriumi, Akira, Oshima, Masaharu
Format: Article
Language:English
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Summary:Graphene is a promising material for next-generation devices owing to its excellent electronic properties. Graphene devices do not, however, exhibit the high performance that is expected considering graphene's intrinsic electronic properties. Operando, i.e., gate-controlled, photoelectron nanospectroscopy is needed to observe electronic states in device operation conditions. We have achieved, for the first time, pinpoint operando core-level photoelectron nanospectroscopy of a channel of a graphene transistor. The direct relationship between the graphene's binding energy and the Fermi level is reproduced by a simulation assuming linear band dispersion. This operando nanospectroscopy will bridge the gap between electronic properties and device performance.
ISSN:1882-0778
1882-0786
DOI:10.7567/APEX.7.065101