Suppression of killer defects in diamond vertical-type Schottky barrier diodes

Vertical architectures in diamond Schottky barrier diodes (VSBDs) are favorable for realizing high-current operation. However, a major obstacle affecting performance is the presence of killer defects which are thought to originate from heavily B-doped p+ substrates. Here, we introduced a buffer laye...

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Bibliographic Details
Published in:	Japanese Journal of Applied Physics 2020-04, Vol.59 (SG), p.SGGD10
Main Authors:	Kobayashi, Atsushi, Ohmagari, Shinya, Umezawa, Hitoshi, Takeuchi, Daisuke, Saito, Takeyasu
Format:	Article
Language:	eng
Subjects:	Buffer layers Cathodoluminescence Crystal defects Defects Diamonds Electric field strength Leakage current Reduction (metal working) Schottky diodes Substrates
Online Access:	Get full text
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Summary:	Vertical architectures in diamond Schottky barrier diodes (VSBDs) are favorable for realizing high-current operation. However, a major obstacle affecting performance is the presence of killer defects which are thought to originate from heavily B-doped p+ substrates. Here, we introduced a buffer layer to suppress the extended defects from p+ substrate to epitaxial layer, called metal-assisted termination. Significant reduction of band-A luminescence in cathodoluminescence spectra was confirmed, indicating a large improvement in crystallinity. VSBDs showed highly uniform rectifying actions with suppressed leakage currents. The electric field strength was increased from 1.9 to 5.0 MV cm−1 when a buffer layer was inserted.
ISSN:	0021-4922 1347-4065