Improved DC-RF dispersion with epitaxial passivation for high linearity graded AlGaN channel field effect transistors

We demonstrate DC-RF dispersion-free graded AlGaN channel transistor with an epitaxial passivation. The device used for this experiment was an AlGaN channel polarization-graded field effect transistor (PolFET) with Al-composition grading from 0% to 30%. We were able to reduce the dispersion to almos...

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Bibliographic Details
Published in:Applied physics express 2020-03, Vol.13 (3), p.36502
Main Authors: Sohel, Shahadat H., Xie, Andy, Beam, Edward, Xue, Hao, Razzak, Towhidur, Bajaj, Sanyam, Campbell, Sherry, White, Donald, Wills, Kenneth, Cao, Yu, Lu, Wu, Rajan, Siddharth
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Language:English
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Summary:We demonstrate DC-RF dispersion-free graded AlGaN channel transistor with an epitaxial passivation. The device used for this experiment was an AlGaN channel polarization-graded field effect transistor (PolFET) with Al-composition grading from 0% to 30%. We were able to reduce the dispersion to almost zero current collapse and zero knee-walkout for pulsed I-V up to 30 V drain quiescent bias condition with epitaxial passivation, compared to 8 V knee-walkout and 25% current collapse for PolFETs with traditional PECVD SiNx for the same measure conditions. We also report large signal power density and two-tone linearity for these devices up to X-band frequencies.
ISSN:1882-0778
1882-0786
DOI:10.35848/1882-0786/ab7480