Materials science aspects of dielectric film compositions in the planar technology of Ge-based MIS structures

A new fabrication route for Ge based metal-insulator-semiconductor (MIS) transistors has been developed based on materials research of dielectric layer compositions. Unwanted impurities were encapsulated in the Ge substrate by using the gate-first process and a modified thermal GeO 2 layer with incr...

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Bibliographic Details
Published in:Optoelectronics, instrumentation, and data processing instrumentation, and data processing, 2016-09, Vol.52 (5), p.428-433
Main Authors: Gorokhov, E. B., Astankova, K. N.
Format: Article
Language:English
Subjects:
Lasers
Optical Devices
Optics
Photonics
Physical and Engineering Fundamentals of Microelectronics and Optoelectronics
Physics
Physics and Astronomy
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Summary:A new fabrication route for Ge based metal-insulator-semiconductor (MIS) transistors has been developed based on materials research of dielectric layer compositions. Unwanted impurities were encapsulated in the Ge substrate by using the gate-first process and a modified thermal GeO 2 layer with increased viscosity at the interface with the Ge substrate. Increasing the density of the oxide layer near germanium interaction with the deposited Si 3 N 4 film hindered diffusion of the impurities adsorbed by the substrate surface into the transistor channel. This increased the electron mobility in the MIS transistor and prevented its decrease at cryogenic temperatures.
ISSN:8756-6990
1934-7944
DOI:10.3103/S8756699016050022