Comparison of Defects in Hydride Vapor Phase Epitaxy-Grown GaN Films under Different V/III Ratios and the Influence on the Electrical and Optical Properties

In this paper, GaN films were grown by hydride vapor phase epitaxy under different ratios of NH3 to GaCl (V/III ratio). Secondary ion mass spectrometry measurements of [Si], [O], [C] and [H] were carried out to analyse the changes in impurities. Molten KOH - NaOH eutectic etching was applied to reve...

Full description

Saved in:
Bibliographic Details
Published in:International journal of electrochemical science 2020-12, Vol.15 (12), p.12682-12689
Main Authors: Tian, Y., Wei, R.S., Shao, Y.L., Hao, X.P., Wu, Y.Z., Zhang, L., Dai, Y.B., Huo, Q., Zhang, B.G., Hu, H.X.
Format: Article
Language:English
Subjects:
Defects
Electrical properties
GaN
Optical properties
V/III Ratios
Citations: Items that this one cites
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:In this paper, GaN films were grown by hydride vapor phase epitaxy under different ratios of NH3 to GaCl (V/III ratio). Secondary ion mass spectrometry measurements of [Si], [O], [C] and [H] were carried out to analyse the changes in impurities. Molten KOH - NaOH eutectic etching was applied to reveal changes in the dislocation density. With increasing V/III ratio, [O] and the dislocation density decrease, while [Si] increases. Further the influence of the V/III ratio on the electrical and optical properties was examined by Hall and photoluminescence measurements.
ISSN:1452-3981
1452-3981
DOI:10.20964/2020.12.33