Bi- tri- and few-layer graphene growth by PLD technique using Ni as catalyst

The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect t...

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Bibliographic Details
Published in:Materials science--Poland 2017-12, Vol.35 (4), p.687-693
Main Authors: Kalsoom, Umber, Rafique, M. Shahid, Shahzadi, Shamaila, Fatima, Khizra, ShaheeN, Rabia
Format: Article
Language:English
Subjects:
atomic force microscopy
graphene
pulsed laser deposition
Raman spectroscopy
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Summary:The objective of the present research work is to optimize the growth conditions of bi- tri- and few-layer graphene using pulsed laser deposition (PLD) technique. The graphene was grown on n-type silicon (1 0 0) at 530 °C. Raman spectroscopy of the grown films revealed that the growth of low defect tri-layer graphene depended upon Ni content and uniformity of the Ni film. The line profile analysis of the AFM micrographs of the films also confirmed the formation of bi- tri- and a few-layer graphene. The deposited uniform Ni film matrix and carbon/Ni thickness ratio are the controlling factors for the growth of bitri- or few- layer graphene using pulsed laser deposition technique.
ISSN:2083-134X
2083-134X
DOI:10.1515/msp-2017-0099