Galvanostatic Plating with a Single Additive Electrolyte for Bottom-Up Filling of Copper in Mesoscale TSVs

A methanesulfonic acid (MSA) electrolyte with a single suppressor additive was used for potentiostatic bottom-up filling of copper in mesoscale through silicon vias (TSVs). Conversly, galvanostatic deposition is desirable for production level full wafer plating tools as they are typically not equipp...

Full description

Saved in:
Bibliographic Details
Published in:Journal of the Electrochemical Society 2018-12, Vol.166 (1), p.D3226-D3231
Main Authors: Menk, L. A., Baca, E., Blain, M. G., McClain, J., Dominguez, J., Smith, A., Hollowell, A. E.
Format: Article
Language:English
Subjects:
3D Interconnects
Electrodeposition - Copper
INORGANIC, ORGANIC, PHYSICAL, AND ANALYTICAL CHEMISTRY
MEMs
Microelectronics - Semiconductor Processing
Through Silicon Vias
TSV
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A methanesulfonic acid (MSA) electrolyte with a single suppressor additive was used for potentiostatic bottom-up filling of copper in mesoscale through silicon vias (TSVs). Conversly, galvanostatic deposition is desirable for production level full wafer plating tools as they are typically not equipped with reference electrodes which are required for potentiostatic plating. Potentiostatic deposition was used to determine the over-potential required for bottom-up TSV filling and the resultant current was measured to establish a range of current densities to investigate for galvanostatic deposition. Galvanostatic plating conditions were then optimized to achieve void-free bottom-up filling in mesoscale TSVs for a range of sample sizes.
ISSN:0013-4651
1945-7111
DOI:10.1149/2.0271901jes