Design and Development of ALD Precursors for Microelectronics

Atomic Layer Deposition (ALD) has been identified as one of the primary technologies to fabricate devices with novel architecture. This requires design and development of advanced ALD precursors that can withstand the rigors of various integration steps while delivering the high quality layers essen...

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Bibliographic Details
Main Authors: Kanjolia, Ravi K., Anthis, J., Odedra, R., Williams, P., Heys, P. N.
Format: Conference Proceeding
Language:English
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Summary:Atomic Layer Deposition (ALD) has been identified as one of the primary technologies to fabricate devices with novel architecture. This requires design and development of advanced ALD precursors that can withstand the rigors of various integration steps while delivering the high quality layers essential to the new device design. The design criteria require these precursors to have suitable thermal stability, volatility, purity, reactivity, scalability, and economic viability. This brief review describes various elements of a precursor screening/development cycle from the materials company perspective. Specific examples will be presented for precursors of selected metals (such as ruthenium and cobalt) and high-k dielectrics (Hf, Zr, Ln) oxide materials.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2979983