Performance, Reliability, and Manufacturability of AlGaN/GaN High Electron Mobility Transistors on Silicon Carbide Substrates

AlGaN/GaN High Electron Mobility Transistors (HEMTs) are receiving considerable attention as a technology that is well suited for high power, high efficiency, radio frequency(RF) and microwave applications. The demonstration of attractive performance of GaN based HEMT technology for applications suc...

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Main Authors: Brown, Jeffrey D., Gibb, Shawn, McKenna, Johnathan, Poulton, Matthew, Lee, Sangmin, Gratzer, Kevin, Hosse, Brook, Mercier, Thomas, Yang, Yinbao, Young, Martin, Green, Daniel, Vetury, Ramakrishna, Shealy, Jeffrey
Format: Conference Proceeding
Language:English
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Summary:AlGaN/GaN High Electron Mobility Transistors (HEMTs) are receiving considerable attention as a technology that is well suited for high power, high efficiency, radio frequency(RF) and microwave applications. The demonstration of attractive performance of GaN based HEMT technology for applications such as wireless basestations, has been successfully achieved by several organizations, including RFMD. Development efforts are now directed toward understanding and resolving the issues associated with the manufacturability and reliability of this technology. We report on the status of this technology at RFMD with respect to the goals delivering a manufacturable and reliable GaN HEMT device technology. The material growth and process technology will be described. Results of device performance, wafer fab repeatability, and technology reliability are reported.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2357206