Prospects for Complementary SiGeC BiCMOS on Thin-Film SOI

This paper reviews the concept, manufacturing process and electrical characteristics of a novel self-aligned SiGeC HBT structure suitable for thin-film SOI substrates. It then describes the integration of this device into 130nm SOI CMOS technology, and presents early results on the development of a...

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Main Authors: Chantre, Alain, Avenier, Gregory, Boissonnet, Laurence, Borot, Gael, Bouillon, Pierre, Brossard, Florence, Chevalier, Pascal, Deleglise, Florence, Dutartre, Didier, Duvernay, Julien, Fregonese, Sebastien, Judong, Fabienne, Pantel, Roland, Perrotin, Andre, Rauber, Bruno, Rubaldo, Laurent, Saguin, Fabienne, Schwartzmann, Thierry, Vandelle, Benoit, Zimmer, Thomas
Format: Conference Proceeding
Language:English
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Summary:This paper reviews the concept, manufacturing process and electrical characteristics of a novel self-aligned SiGeC HBT structure suitable for thin-film SOI substrates. It then describes the integration of this device into 130nm SOI CMOS technology, and presents early results on the development of a complementary pnp HBT.
ISSN:1938-5862
1938-6737
DOI:10.1149/1.2355833