Impact of Ge-Oxide-Scavenging on Low-T Steam Oxidation and Passivation of Bi-Axially Strained Si0.75Ge0.25

Oxygen vacancy generation and diffusion plays an important role during SiGe oxidation and passivation. Here we show how Ge-oxide scavenging can be used to suppress SiGe oxidation or for Si-cap-free SiGe passivation.

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Bibliographic Details
Published in:ECS transactions 2019-10, Vol.93 (1), p.71-72
Main Authors: Wostyn, Kurt, Ragnarsson, Lars-Åke, Arimura, Hiroaki, Chasin, Adrian, Conard, Thierry, Rondas, Dirk, Loo, Roger, Holsteyns, Frank, Horiguchi, Naoto
Format: Article
Language:English
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Description
Summary:Oxygen vacancy generation and diffusion plays an important role during SiGe oxidation and passivation. Here we show how Ge-oxide scavenging can be used to suppress SiGe oxidation or for Si-cap-free SiGe passivation.
ISSN:1938-5862
1938-6737
1938-6737
1938-5862
DOI:10.1149/09301.0071ecst