Stability of Pseudomorphic and Compressively Strained Ge 1-X Sn x Thin Films under Rapid Thermal Annealing

Thin film Ge 1-x Sn x with Sn mole fractions up to 7 % were grown using chemical vapor deposition on Si substrates with a relaxed Ge buffer. Rapid thermal annealing at 550 to 700 °C resulted in film relaxation and Sn segregation. X-ray diffraction rocking curves and reciprocal space mapping of the f...

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Bibliographic Details
Published in:ECS transactions 2014-08, Vol.64 (6), p.881-893
Main Authors: Conley, Benjamin R, Mosleh, Aboozar, Ghetmiri, Seyed Amir, Du, Wei, Sun, Greg, Soref, Richard, Margetis, Joe, Tolle, John, Naseem, Hameed A, Yu, Shui-Qing
Format: Article
Language:English
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Summary:Thin film Ge 1-x Sn x with Sn mole fractions up to 7 % were grown using chemical vapor deposition on Si substrates with a relaxed Ge buffer. Rapid thermal annealing at 550 to 700 °C resulted in film relaxation and Sn segregation. X-ray diffraction rocking curves and reciprocal space mapping of the films showed a reduction in strain after annealing. Samples with Sn mole fractions of 3.2, 6.0, and 7.0 % were partially relaxed when annealed above 550 °C for 30 seconds. Raman spectroscopy of the Ge-Ge longitudinal optical phonon showed a red shift for samples with Sn mole fraction ≤ 6 %, which indicates an increase in Sn atom incorporation within the lattice due to annealing. Photoluminescence measurements of CMOS compatible annealing below 450 °C showed an initial reduction in film quality for short time annealing, but an increase in photoluminescence intensity was observed for longer annealing time.
ISSN:1938-5862
1938-6737
DOI:10.1149/06406.0881ecst