Morphological Effect of Doping Environment on Silicon Nanowires Grown by Plasma-Assisted Chemical Vapor Deposition

Physical properties of semiconductor nanowires are tied intimately to their specific morphologies such as length and diameter. We studied the growth of silicon nanowires and found their lengths and diameters to vary over orders of magnitude in different doping environments. In all cases we examined,...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-11, Vol.51 (11), p.11PE04-11PE04-6
Main Authors: Lohn, Andrew J, Cormia, Robert D, Fryauf, David M, Zhang, Junce, Norris, Kate J, Kobayashi, Nobuhiko P
Format: Article
Language:English
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Summary:Physical properties of semiconductor nanowires are tied intimately to their specific morphologies such as length and diameter. We studied the growth of silicon nanowires and found their lengths and diameters to vary over orders of magnitude in different doping environments. In all cases we examined, doping resulted in increased diameters. In addition, boron doping was found to accelerate volume growth rate while arsenic and antimony both appeared to slow it down. We further studied the formation of the native oxides that cover the nanowires. X-ray photoelectron spectroscopy indicated that properties of the native oxides are also dependent on doping environment and correlated to doping-dependent shifts in apparent binding energy of the Si 2p 3/2 peak illustrating that the electronic contribution is the dominant mechanism for the oxide growth.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.11PE04