Organic Ferroelectric Field-Effect Transistor Memory Using Flat Poly(vinylidene fluoride--tetrafluoroethylene) and Pentacene Thin Films

Organic ferroelectric field-effect transistor (FET) memories have been fabricated using pentacene as the semiconductor and a flat poly(vinylidene fluoride--tetrafluoroethylene) [P(VDF--TeFE)] thin film as the ferroelectric gate. The P(VDF--TeFE) film is prepared by spin coating, and it was cooled sl...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2012-02, Vol.51 (2), p.02BK06-02BK06-4
Main Authors: Kanashima, Takeshi, Yabe, Kazuki, Okuyama, Masanori
Format: Article
Language:English
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Summary:Organic ferroelectric field-effect transistor (FET) memories have been fabricated using pentacene as the semiconductor and a flat poly(vinylidene fluoride--tetrafluoroethylene) [P(VDF--TeFE)] thin film as the ferroelectric gate. The P(VDF--TeFE) film is prepared by spin coating, and it was cooled slowly with a flattening process after annealing. The polarization--electric field ($P$--$E$) hysteresis of the P(VDF--TeFE) thin film prepared by slow cooling is larger than that in the case of quick cooling. Moreover, the flattening process does not have a negative effect on ferroelectric properties. The obtained remanent polarization ($P_{\text{r}}$) of 5.2 μC/cm 2 is sufficient for controlling the pentacene surface potential. Good memory characteristics are obtained in the P(VDF--TeFE) gate FET with pentacene deposited on the flat P(VDF--TeFE). The maximum drain current is about twice larger than that deposited on the rough P(VDF--TeFE) prepared by quick cooling, and the memory retention is over 1 week.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.51.02BK06