Effect of NH 3 -Free Silicon Nitride for Protection Layer of Magnetic Tunnel Junction on Magnetic Properties of Magnetoresistive Random Access Memory

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2009-04, Vol.48 (4S), p.4
Main Authors: Murata, Tatsunori, Miyagawa, Yoshihiro, Isaki, Ryuichiro, Shibata, Toshinori, Matsuda, Ryoji, Tsujiuchi, Mikio, Takeuchi, Yosuke, Ueno, Shuichi, Matsuura, Masazumi, Asai, Koyu, Kojima, Masayuki
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.48.04C024