Characteristics of Gallium-Doped Zinc Oxide Thin-Film Transistors Fabricated at Room Temperature Using Radio Frequency Magnetron Sputtering Method

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-01, Vol.47 (1R), p.87
Main Authors: Jeon, Hoonha, Verma, Ved Prakash, Hwang, Sookhyun, Lee, Sooyeon, Park, Chiyoung, Kim, Do-Hyun, Choi, Wonbong, Jeon, Minhyon
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.87