Characterization of Strain for High-Performance Metal–Oxide–Semiconductor Field-Effect-Transistor

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 2008-04, Vol.47 (4S), p.2538
Main Authors: Kosemura, Daisuke, Kakemura, Yasuto, Yoshida, Tetsuya, Ogura, Atsushi, Kohno, Masayuki, Nishita, Tatsuo, Nakanishi, Toshio
Format: Article
Language:English
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ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.47.2538