New Negative-Bias-Temperature-Instability Improvement Using Buffer Layer under Highly Compressive Contact Etch Stop Layer for 45-nm-Node Complementary Metal–Oxide–Semiconductor and Beyond

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 2007-04, Vol.46 (4S), p.2015
Main Authors: Huang, Cheng-Tung, Lee, Kun-Hsien, Jeng, Li-Shian, Hung, Wen-Han, Ting, Shyh-Fann, Wu, Meng-Yi, Tseng, Mei-Lun, Cheng, Osbert, Liang, Chia-Wen
Format: Article
Language:English
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.46.2015