Low-Temperature Metalorganic Vapor Phase Epitaxy (MOVPE) of GaN using Tertiarybutylhydrazine

Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as well as GaAs(111) B substrates. On (001)-oriented Ga...

Full description

Saved in:
Bibliographic Details
Published in:Japanese Journal of Applied Physics 1999-02, Vol.38 (2A), p.L105
Main Authors: Pohl, Udo W., Knorr, Kerstin, Möller, Carsten, Gernert, Ulrich, Richter, Wolfgang, Bläsing, Jürgen, Christen, Jürgen, Gottfriedsen, Jochen, Schumann, Herbert
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:Tertiarybutylhydrazine was used as a novel nitrogen source for metalorganic vapor phase epitaxy of GaN at low temperatures. Hexagonal epilayers with optically smooth and specular surfaces were grown with trimethylgallium on basal plane sapphire as well as GaAs(111) B substrates. On (001)-oriented GaAs, predominantly cubic GaN was grown. Incorporation of carbon impurities was distinctly lower than in layers grown with dimethylhydrazine. The epilayer quality is presently limited by the purity of the available tertiarybutylhydrazine.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.38.L105