Band Diagram of Metal-Insulator-Magnetic Semiconductor (La 0.85 Sr 0.15 MnO 3 ) Structure at Room Temperature

We investigated electrical properties of a La 0.85 Sr 0.15 MnO 3 magnetic semiconductor through observation of photoinduced current and electron-beam-induced current (EBIC) across the Al/(100)SrTiO 3 /(100)La 0.85 Sr 0.15 MnO 3 metal-insulator-semiconductor (MIS) structure at room temperature. The t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1998-08, Vol.37 (8B), p.L999
Main Authors: Kudo, Tomohiko, Tachiki, Minoru, Kashiwai, Tadahiro, Kobayashi, Takeshi
Format: Article
Language:English
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Summary:We investigated electrical properties of a La 0.85 Sr 0.15 MnO 3 magnetic semiconductor through observation of photoinduced current and electron-beam-induced current (EBIC) across the Al/(100)SrTiO 3 /(100)La 0.85 Sr 0.15 MnO 3 metal-insulator-semiconductor (MIS) structure at room temperature. The test specimens were prepared by the Ar–F excimer laser ablation technique. According to the current flowing direction, it was observed that the La 0.85 Sr 0.15 MnO 3 band bends downward at and near the interface. Furthermore, from determination of the flat-band condition, the work function of (100)La 0.85 Sr 0.15 MnO 3 epitaxial film was estimated to be ∼4.8 eV.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.37.L999