Growth of GaN on GaAs(111)B by metalorganic hydrogen chloride VPE using double buffer layer

GaN epitaxial layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOH-VPE) using double GaN buffer layers on GaAs substrate. In this method, the first GaN buffer layer was deposited on GaAs(111)B substrate at 550° C, and after annealing at 850° C for 10 min, the second buffer la...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1997-09, Vol.36 (9AB), p.L1133-L1135
Main Authors: TAKAHASHI, N, MATSUKI, S, KOUKITU, A, SEKI, H
Format: Article
Language:English
Subjects:
Cross-disciplinary physics: materials science
rheology
Exact sciences and technology
Materials science
Methods of deposition of films and coatings
film growth and epitaxy
Physics
Vapor phase epitaxy
growth from vapor phase
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Summary:GaN epitaxial layers were grown by metalorganic hydrogen chloride vapor phase epitaxy (MOH-VPE) using double GaN buffer layers on GaAs substrate. In this method, the first GaN buffer layer was deposited on GaAs(111)B substrate at 550° C, and after annealing at 850° C for 10 min, the second buffer layer was deposited at 500° C. Then the GaN epitaxial layer was grown at 850° C. The X-ray full width at half maximum (FWHM) value of the obtained hexagonal GaN was smaller than that of a GaN epitaxial layer with a single buffer layer. The room temperature photoluminescence spectra exhibited a strong peak at approximately 361.5 nm.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.36.l1133