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A Contribution of Vibrationally Excited Cl 2 Molecules to GaAs Reactive Ion Etching in Cl 2 /Ar
The experimental results on GaAs RIE in Cl 2 /Ar are considered within the framework of the ion–neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl 2 partial pressure, but fails at the increased chlorine percentage. A possible c...
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Published in: | Japanese Journal of Applied Physics 1996-07, Vol.35 (7B), p.L940 |
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Main Authors: | , , , |
Format: | Article |
Language: | English |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The experimental results on GaAs RIE in Cl
2
/Ar are considered within the framework of the ion–neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl
2
partial pressure, but fails at the increased chlorine percentage. A possible contribution of vibrationally excited Cl
2
molecules to GaAs etch rate has been considered. |
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ISSN: | 0021-4922 1347-4065 |
DOI: | 10.1143/JJAP.35.L940 |