A Contribution of Vibrationally Excited Cl 2 Molecules to GaAs Reactive Ion Etching in Cl 2 /Ar

The experimental results on GaAs RIE in Cl 2 /Ar are considered within the framework of the ion–neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl 2 partial pressure, but fails at the increased chlorine percentage. A possible c...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-07, Vol.35 (7B), p.L940
Main Authors: Stanislav A. Moshkalyov, Stanislav A. Moshkalyov, Munemasa Machida, Munemasa Machida, Sergei V. Lebedev, Sergei V. Lebedev, Delton O. Campos, Delton O. Campos
Format: Article
Language:English
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Summary:The experimental results on GaAs RIE in Cl 2 /Ar are considered within the framework of the ion–neutral synergy model. It has been shown, that the model gives a good agreement with the etch rate data obtained for low Cl 2 partial pressure, but fails at the increased chlorine percentage. A possible contribution of vibrationally excited Cl 2 molecules to GaAs etch rate has been considered.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.L940