Low Contact-Resistance and Shallow Pd/Ge Ohmic Contacts to n-In 0.53 Ga 0.47 As on InP Substrate Formed by Rapid Thermal Annealing

Shallow Pd/Ge ohmic contacts to n -type In 0.53 Ga 0.47 As with low specific contact resistivity are obtained by the rapid thermal annealing method. For samples annealed at 425°C for 30 s, the lowest resistivity value is 6.66×10 -8 Ω·cm 2 and the average value is 1.4×10 -6 Ω·cm 2 . For samples annea...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1996-12, Vol.35 (12A), p.L1569
Main Authors: Yeh, Yung-Hui, Jiun-Tsuen Lai, Jiun-Tsuen Lai, Joseph Ya-min Lee, Joseph Ya-min Lee
Format: Article
Language:English
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Summary:Shallow Pd/Ge ohmic contacts to n -type In 0.53 Ga 0.47 As with low specific contact resistivity are obtained by the rapid thermal annealing method. For samples annealed at 425°C for 30 s, the lowest resistivity value is 6.66×10 -8 Ω·cm 2 and the average value is 1.4×10 -6 Ω·cm 2 . For samples annealed at 425°C for 60 s, the lowest resistivity value is 2.13×10 -7 Ω·cm 2 and the average value is 8.6×10 -7 Ω·cm 2 . Secondary ion mass spectrometry (SIMS) analysis shows that the ohmic contact is very shallow. It is found that there is a correlation between gallium and indium SIMS signal bumps and good ohmic contact behavior.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.35.L1569