Interaction of Ga adsorbates with dangling bonds on the hydrogen terminated Si(100) surface

Adsorption of Ga on the hydrogen terminated Si(100)–2×1–H surface has been investigated by scanning tunneling microscopy (STM). We have found that the thermally deposited Ga atoms preferentially adsorb on the hydrogen-missing dangling bonds and on the surface impurities. We desorb hydrogen atoms by...

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Bibliographic Details

Published in:	Japanese Journal of Applied Physics 1996-08, Vol.35 (8B), p.L1085-L1088
Main Authors:	HASHIZUME, T, HEIKE, S, LUTWYCHE, M. I, WATANABE, S, NAKAJIMA, K, NISHI, T, WADA, Y
Format:	Article
Language:	English
Subjects:	Condensed matter: structure, mechanical and thermal properties Electron, ion, and scanning probe microscopy Exact sciences and technology Physics Scanning probe microscopy: scanning tunneling, atomic force, scanning optical, magnetic force, etc Solid surfaces and solid-solid interfaces Structure of solids and liquids crystallography Surface structure and topography Surfaces and interfaces thin films and whiskers (structure and nonelectronic properties)
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