Time-dependent dielectric breakdown of thin silicon oxide using dense contact electrification

We achieved time dependent dielectric breakdown (TDDB) measurement of a thin silicon oxide microscopically using contact electrification. By increasing the external bias voltage, TDDBs of the oxide layer without and with oxide surface roughening were observed sequentially. Charge-to-breakdown in the...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1994, Vol.33 (6B), p.3756-3760
Main Authors: FUKANO, Y, HONTANI, K, UCHIHASHI, T, OKUSAKO, T, CHAYAHARA, A, SUGAWARA, Y, YAMANISHI, Y, OASA, T, MORITA, S
Format: Article
Language:English
Subjects:
Condensed matter: electronic structure, electrical, magnetic, and optical properties
Dielectric breakdown and space-charge effects
Dielectric properties of solids and liquids
Dielectrics, piezoelectrics, and ferroelectrics and their properties
Electronic structure and electrical properties of surfaces, interfaces, thin films and low-dimensional structures
Electronic transport in interface structures
Exact sciences and technology
Physics
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Summary:We achieved time dependent dielectric breakdown (TDDB) measurement of a thin silicon oxide microscopically using contact electrification. By increasing the external bias voltage, TDDBs of the oxide layer without and with oxide surface roughening were observed sequentially. Charge-to-breakdown in the contact electrification was estimated to be on the order of 10 -5 ∼10 -6 C/cm 2 . This value is higher than that of electrified charge density in the absence of external bias voltage, but is much smaller than the value of ∼5×10 -1 C/cm 2 obtained in the conventional TDDB measurement using a metal-oxide-semiconductor (MOS) capacitor. From calculation of the number of injected charges per atom, TDDB measurement using contact electrification is expected to provide a more quantitative evaluation of charge-to-breakdown than that using a MOS capacitor.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.33.3756