Atomic Layer Epitaxy of AlAs and (AlAs) n (GaAs) n Superlattices Using Dimethylaluminumhydride as the Al Source

Atomic layer epitaxy (ALE) of AlAs has been achieved by using nominally pure dimethylaluminumhydride as the Al source, instead of its mixing with trimethylaluminum which was used in our previous ALE growth of ALE. Short period superlattices of (AlAs) n (GaAs) n with n =3, 5 and 10 have been fabricat...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-03, Vol.30 (3B), p.L435
Main Authors: Ishizaki, Mamoru, Kano, Nobuo, Junji Yoshino, Junji Yoshino, Hiroshi Kukimoto, Hiroshi Kukimoto
Format: Article
Language:English
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Summary:Atomic layer epitaxy (ALE) of AlAs has been achieved by using nominally pure dimethylaluminumhydride as the Al source, instead of its mixing with trimethylaluminum which was used in our previous ALE growth of ALE. Short period superlattices of (AlAs) n (GaAs) n with n =3, 5 and 10 have been fabricated at 470°C entirely by ALE, for the first time. The periodicity observed by X-ray diffraction measurements was as designed for these superlattices.
ISSN:0021-4922
1347-4065
DOI:10.1143/JJAP.30.L435