In situ monitoring of surface kinetics in GaAs atomic layer epitaxy by surface photo-absorption method

The epitaxial growth reactions that proceed on the substrate surface during halogen transport atomic layer epitaxy (ALE) are observed directly with a surface photo-absorption method. The heat of desorption (48.5 kcal/mol) is obtained from the reflective intensity change. The value agrees well with t...

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Bibliographic Details
Published in:Japanese Journal of Applied Physics 1991-10, Vol.30 (10A), p.L1712-L1714
Main Authors: KOUKITU, A, IKEDA, H, SUZUKI, H, SEKI, H
Format: Article
Language:English
Subjects:
Condensed matter: structure, mechanical and thermal properties
Exact sciences and technology
Physics
Surfaces and interfaces
thin films and whiskers (structure and nonelectronic properties)
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Summary:The epitaxial growth reactions that proceed on the substrate surface during halogen transport atomic layer epitaxy (ALE) are observed directly with a surface photo-absorption method. The heat of desorption (48.5 kcal/mol) is obtained from the reflective intensity change. The value agrees well with the activation energy reported in classical halogen transport vapor-phase epitaxy. Based on the observation, a reaction mechanism is proposed. The self-limiting mechanism of halogen transport ALE is ascribed to the complete coverage of surface As sites by the adsorbed complex.
ISSN:0021-4922
1347-4065
DOI:10.1143/jjap.30.l1712