Formation of a Top Electrode on Vertical Si Nanowire Devices Using Graphene as a Supporting Layer
This letter presents a method of forming a top electrode on vertical silicon nanowires by using multilayer graphene as a supporting layer during metal deposition. We exploit graphene's unique material properties such as its impermeability to various gases and ions. An improved shallow trench is...
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| Published in: | Applied physics express 2012-10, Vol.5 (10), p.105103-105103-3 |
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| Main Authors: | , , , , , |
| Format: | Article |
| Language: | eng |
| Online Access: | Get full text |
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| Summary: | This letter presents a method of forming a top electrode on vertical silicon nanowires by using multilayer graphene as a supporting layer during metal deposition. We exploit graphene's unique material properties such as its impermeability to various gases and ions. An improved shallow trench isolation process is also presented to fabricate self-aligned silicon nanowire arrays for device integration. By this method, silicon nanowire bundle arrays with air gap structures are successfully fabricated using a top-down approach. This technique is expected to find use in many nanowire device applications. |
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| ISSN: | 1882-0778 1882-0786 |