Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films

Strong Correlation Between Oxygen Donor and Near-Surface Electron Accumulation in Undoped and Mg-Doped In-Polar InN Films

A strong electron accumulation was observed in near-surface regions of undoped and Mg-doped In-polar InN films by analyzing the valence band maximum dependent on the take-off angles. The amount of oxygen correlated with electron carrier concentration drastically increased in both near-surface region...

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Bibliographic Details
Published in:Applied physics express 2012-03, Vol.5 (3), p.031002-031002-3
Main Authors: Yang, AnLi, Yamashita, Yoshiyuki, Yamaguchi, Tomohiro, Imura, Masataka, Kaneko, Masamitsu, Sakata, Osami, Nanishi, Yasushi, Kobayashi, Keisuke
Format: Article
Language:eng
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Summary:A strong electron accumulation was observed in near-surface regions of undoped and Mg-doped In-polar InN films by analyzing the valence band maximum dependent on the take-off angles. The amount of oxygen correlated with electron carrier concentration drastically increased in both near-surface regions, suggesting that the oxygen atoms in both near-surface regions act as donors. For Mg-doped InN, the amount of oxygen in the near-surface region was almost twice that of undoped InN, indicating that much more oxygen atoms in the near-surface region were incorporated to compensate the Mg acceptors to contribute to the electron accumulation surface layer.
ISSN:1882-0778
1882-0786