Origin of Larger Drain Current Variability in N-Type Field-Effect Transistors Analyzed by Variability Decomposition Method

The origin of larger on-state drain current ($I_{\text{ON}}$) variability in n-type field-effect transistors (NFETs) than that in p-type field-effect transistors (PFETs), is investigated by evaluating FETs fabricated using 65 nm technology. It is found that the larger $I_{\text{ON}}$ variability in...

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Bibliographic Details
Published in:Applied physics express 2010-11, Vol.3 (11), p.114201-114201-3
Main Authors: Tsunomura, Takaaki, Kumar, Anil, Mizutani, Tomoko, Nishida, Akio, Takeuchi, Kiyoshi, Inaba, Satoshi, Kamohara, Shiro, Terada, Kazuo, Hiramoto, Toshiro, Mogami, Tohru
Format: Article
Language:English
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Summary:The origin of larger on-state drain current ($I_{\text{ON}}$) variability in n-type field-effect transistors (NFETs) than that in p-type field-effect transistors (PFETs), is investigated by evaluating FETs fabricated using 65 nm technology. It is found that the larger $I_{\text{ON}}$ variability in NFETs is caused by not only the larger threshold voltage component but also the larger current-onset voltage component of the $I_{\text{ON}}$ variability in NFETs. Moreover, it is experimentally confirmed that $I_{\text{ON}}$ variability of NFETs can be reduced by the halo carbon co-implantation through the reduction of threshold voltage and current-onset voltage components of the $I_{\text{ON}}$ variability in NFETs.
ISSN:1882-0778
1882-0786
DOI:10.1143/APEX.3.114201