Pulling CsI(Na) single crystals from melt by continuous method without plastic deformation

It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary...

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Bibliographic Details
Published in:Crystallography reports 2009-12, Vol.54 (7), p.1280-1284
Main Authors: Tymoshenko, M. M., Goriletsky, V. I., Shakhova, K. V., Sumin, V. I., Boyarintseva, Ya. A., Vasyliev, V. V.
Format: Article
Language:English
Subjects:
Crystal Growth
Crystallography and Scattering Methods
Physics
Physics and Astronomy
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Summary:It is established that bromine impurity in CsI(Na) crystals not only facilitates the homogeneous incorporation of an activator into the lattice and prevents complex activator clusters from forming, but it also significantly hinders (at certain concentrations) the action of the primary and secondary dislocation slip systems. It is shown that the automatic pulling of large CsI-based crystals can be provided by the introduction of a single Br impurity into the charge; this impurity, to a large extent, strengthens only the top part of the crystal. The absence of plastic deformation in CsI-CsBr(Na) crystals with a diameter Ø300 mm and height h = 600 mm (grown by the continuous method) and Ø500 mm and h = 200 mm (grown by the automatic Kiropulos method) has been experimentally confirmed.
ISSN:1063-7745
1562-689X
DOI:10.1134/S1063774509070256