Mechanisms of electroconductivity in silicon-carbon nanocomposites with nanosized tungsten inclusions within a temperature range of 20-200°C

The temperature dependences of the specific electroconductivity of silicon-carbon films with nanosized tungsten inclusions were studied. The electroconductivity of specimens within a temperature range of 20–200°C was measured by the contact method. The electroconductivity of films with a room-temper...

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Bibliographic Details
Published in:Russian microelectronics 2013-12, Vol.42 (8), p.488-491
Main Authors: Anfimov, I. M., Kobeleva, S. P., Malinkovich, M. D., Shchemerov, I. V., Toporova, O. V., Parkhomenko, Yu. N.
Format: Article
Language:English
Subjects:
Electrical Engineering
Engineering
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Summary:The temperature dependences of the specific electroconductivity of silicon-carbon films with nanosized tungsten inclusions were studied. The electroconductivity of specimens within a temperature range of 20–200°C was measured by the contact method. The electroconductivity of films with a room-temperature specific electroconductivity of 0.03-15 Ω cm was shown to grow with increasing temperature and have two componentsthermoactivation and constant, presumably, of a tunnel character. The contribution of the tunnel component grew from 40 to 80% with an increase in the tungsten concentration in a film and a simultaneous decrease in the activation energy from 0.1 to 0.06 eV.
ISSN:1063-7397
1608-3415
DOI:10.1134/S1063739713080027