Origin analysis of thermal neutron soft error rate at nanometer scale

Recently, thermal neutrons have been identified as a cause of soft errors in advanced electronic devices. To analyze the origin of such errors, dynamic secondary ion mass spectrometry (SIMS), time-of-flight (TOF)-SIMS, and three-dimensional atom probe (3DAP) methods have been used systematically. TO...

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Bibliographic Details
Published in:Journal of vacuum science and technology. B, Nanotechnology & microelectronics Nanotechnology & microelectronics, 2015-03, Vol.33 (2)
Main Authors: Yamazaki, Takashi, Kato, Takashi, Uemura, Taiki, Matsuyama, Hideya, Tada, Yoko, Yamazaki, Kazutoshi, Soeda, Takeshi, Miyajima, Toyoo, Kataoka, Yuji
Format: Article
Language:English
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Summary:Recently, thermal neutrons have been identified as a cause of soft errors in advanced electronic devices. To analyze the origin of such errors, dynamic secondary ion mass spectrometry (SIMS), time-of-flight (TOF)-SIMS, and three-dimensional atom probe (3DAP) methods have been used systematically. TOF-SIMS results showed that the existence region of 10B, the source of soft errors, has a high correlation to the existence region of W. Furthermore, 3DAP results for the sample extracted from the area near the W-plug revealed high 10B concentration at the W-plug.
ISSN:2166-2746
2166-2754
DOI:10.1116/1.4907400