Effect of bias application to plasma density in weakly magnetized inductively coupled plasma

Independent control of the ion flux and energy can be achieved in a dual frequency inductively coupled plasma (ICP) system. Typically, the plasma density is controlled by the high-frequency antenna radio-frequency (RF) power and the ion energy is controlled by the low-frequency bias RF power. Increa...

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Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2013-07, Vol.31 (4)
Main Authors: Kim, Hyuk, Lee, Woohyun, Park, Wanjae, Whang, Ki-Woong
Format: Article
Language:English
Subjects:
ANTENNAS
CLASSICAL AND QUANTUM MECHANICS, GENERAL PHYSICS
ELECTRON TEMPERATURE
HEATING
MAGNETIC FIELDS
PLASMA DENSITY
RADIOWAVE RADIATION
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Summary:Independent control of the ion flux and energy can be achieved in a dual frequency inductively coupled plasma (ICP) system. Typically, the plasma density is controlled by the high-frequency antenna radio-frequency (RF) power and the ion energy is controlled by the low-frequency bias RF power. Increasing the bias power has been known to cause a decrease in the plasma density in capacitively coupled discharge systems as well as in ICP systems. However, an applied axial magnetic field was found to sustain or increase the plasma density as bias power is increased. Measurements show higher electron temperatures but lower plasma densities are obtained in ordinary ICP systems than in magnetized ICP systems under the same neutral gas pressure and RF power levels. Explanations for the difference in the behavior of plasma density with increasing bias power are given in terms of the difference in the heating mechanism in ordinary unmagnetized and magnetized ICP systems.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.4804136