Suppression of boron diffusion in deep submicron devices

Two-dimensional electrostatic potential of 45 nm technology semiconductor devices was mapped by electron holography with 2 nm resolution. The 2-D active dopant distribution was reconstructed by the inverse modeling of the electrostatic potential. Identically manufactured devices with and without a c...

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Bibliographic Details
Published in:Journal of vacuum science & technology. B, Microelectronics and nanometer structures processing, measurement and phenomena Microelectronics and nanometer structures processing, measurement and phenomena, 2011-11, Vol.29 (6), p.062201-062201-4
Main Authors: Gribelyuk, Michael A., Oldiges, Phil, Ronsheim, Paul A., Yuan, Jun, Kimball, Leon
Format: Article
Language:English
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Summary:Two-dimensional electrostatic potential of 45 nm technology semiconductor devices was mapped by electron holography with 2 nm resolution. The 2-D active dopant distribution was reconstructed by the inverse modeling of the electrostatic potential. Identically manufactured devices with and without a carbon co-implant were compared. The authors show that in the presence of the carbon co-implant, the two-dimensional diffusion of the boron halo implant during thermal processing is reduced. It is demonstrated that the carbon co-implant improves the control of the device short channel effects.
ISSN:1071-1023
2166-2746
1520-8567
2166-2754
DOI:10.1116/1.3656376