Loading…
Optimal control on composition and optical properties of silicon oxynitride thin films
The desire to merge the most advantageous physical and chemical properties of both SiO 2 and Si 3 N 4 in an optimum combination tailored to various applications in electrical, optical, and optoelectronic thin films has pushed a continuous interest in the processing of SiO x N y thin films. Inhomogen...
Saved in:
| Published in: | Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2005-07, Vol.23 (4), p.1228-1233 |
|---|---|
| Main Authors: | , , |
| Format: | Article |
| Language: | English |
| Citations: | Items that this one cites Items that cite this one |
| Online Access: | Get full text |
| Tags: |
Add Tag
No Tags, Be the first to tag this record!
|
| Summary: | The desire to merge the most advantageous physical and chemical properties of both
SiO
2
and
Si
3
N
4
in an optimum combination tailored to various applications in electrical, optical, and optoelectronic thin films has pushed a continuous interest in the processing of
SiO
x
N
y
thin films. Inhomogeneous thin film filters have had an increasing importance in the industry as optical filters. Silicon oxynitride,
SiO
x
N
y
, is a very interesting material for multiple applications, including graded refractive index films. The refractive index can be changed from pure silicon dioxide (1.47) to silicon nitride (2.4) by just varying the film composition. We report the growth of
SiO
x
N
y
films by reactive laser ablation using two different solid targets,
Si
3
N
4
and Si, in the ambient of
N
2
and
O
2
at various pressures, introduced separately in the growth chamber, as the film is monitored by real time ellipsometry. The oxidation rate in the films is studied for both targets. The composition of the films is in situ determined by Auger-electron spectroscopy and x-ray photoemission spectroscopy. The evolution of the chemical bonding of the species in the film is done by Fourier transform infrared. The
SiO
x
N
y
film stoichiometry, bonding character, and optical properties are compared as a function of
O
2
pressure while
N
2
pressure is maintained fixed as either the
Si
3
N
4
or Si target is ablated. |
|---|---|
| ISSN: | 0734-2101 1520-8559 |
| DOI: | 10.1116/1.1864032 |