High-sensitivity x-ray photoelectron spectroscopy characterization of a quantum device structure

A high-resolution, high-sensitivity VG x-ray photoelectron spectrometer was used to study a semiconductor layer structure grown for the fabrication of resonant tunneling bipolar transistor devices. Depth profiling using argon ion milling, at a rate of 50 Å/min, has allowed the device layers to be id...

Full description

Saved in:
Bibliographic Details
Published in:Journal of vacuum science & technology. A, Vacuum, surfaces, and films Vacuum, surfaces, and films, 2002-11, Vol.20 (6), p.2131-2133
Main Authors: Wintrebert-Fouquet, M., Butcher, K. S. A.
Format: Article
Language:English
Citations: Items that this one cites
Items that cite this one
Online Access:Get full text
Tags: Add Tag
No Tags, Be the first to tag this record!
Description
Summary:A high-resolution, high-sensitivity VG x-ray photoelectron spectrometer was used to study a semiconductor layer structure grown for the fabrication of resonant tunneling bipolar transistor devices. Depth profiling using argon ion milling, at a rate of 50 Å/min, has allowed the device layers to be identified on the basis of their elemental composition. The measurement system sensitivity was sufficient to identify the elemental components of the 11 Å AlAs barrier layer in quantum tunneling InGaAs/AlAs device layers.
ISSN:0734-2101
1520-8559
DOI:10.1116/1.1508801