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Generation of mW Level in the 300-GHz Band Using Resonant-Cavity-Enhanced Unitraveling Carrier Photodiodes

We present a resonant-cavity-enhanced broadband unitraveling carrier photodiode optimized for terahertz (THz) generation. It uses a novel semitransparent top-contact utilizing subwavelength apertures for enhanced optical transmission. The contact allows front-side illumination of the photodiode usin...

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Bibliographic Details
Published in:IEEE transactions on terahertz science and technology 2017-11, Vol.7 (6), p.800-807
Main Authors: Latzel, Philipp, Pavanello, Fabio, Billet, Maximilien, Bretin, Sara, Beck, Alexandre, Vanwolleghem, Mathias, Coinon, Christophe, Wallart, Xavier, Peytavit, Emilien, Ducournau, Guillaume, Zaknoune, Mohammed, Lampin, Jean-Francois
Format: Article
Language:English
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Summary:We present a resonant-cavity-enhanced broadband unitraveling carrier photodiode optimized for terahertz (THz) generation. It uses a novel semitransparent top-contact utilizing subwavelength apertures for enhanced optical transmission. The contact allows front-side illumination of the photodiode using 1.55-μm-wavelength light, while still retaining a small contact resistance suitable for photomixing at THz frequencies. The responsivity of the device is improved by introducing a metallic mirror below the diode mesa through wafer bonding, producing an optical resonant cavity. A record continuous-wave output power of 750 μW is measured for a single photodiode at 300 GHz. Record values of efficiency are also demonstrated.
ISSN:2156-342X
2156-3446
DOI:10.1109/TTHZ.2017.2756059