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Generation of mW Level in the 300-GHz Band Using Resonant-Cavity-Enhanced Unitraveling Carrier Photodiodes
We present a resonant-cavity-enhanced broadband unitraveling carrier photodiode optimized for terahertz (THz) generation. It uses a novel semitransparent top-contact utilizing subwavelength apertures for enhanced optical transmission. The contact allows front-side illumination of the photodiode usin...
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Published in: | IEEE transactions on terahertz science and technology 2017-11, Vol.7 (6), p.800-807 |
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Main Authors: | , , , , , , , , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | We present a resonant-cavity-enhanced broadband unitraveling carrier photodiode optimized for terahertz (THz) generation. It uses a novel semitransparent top-contact utilizing subwavelength apertures for enhanced optical transmission. The contact allows front-side illumination of the photodiode using 1.55-μm-wavelength light, while still retaining a small contact resistance suitable for photomixing at THz frequencies. The responsivity of the device is improved by introducing a metallic mirror below the diode mesa through wafer bonding, producing an optical resonant cavity. A record continuous-wave output power of 750 μW is measured for a single photodiode at 300 GHz. Record values of efficiency are also demonstrated. |
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ISSN: | 2156-342X 2156-3446 |
DOI: | 10.1109/TTHZ.2017.2756059 |