Cross-Bridge Kelvin Resistor Structures for Reliable Measurement of Low Contact Resistances and Contact Interface Characterization

The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (¿ c ) have been extensively discussed during last few decades and the minimum of the ¿ c value, which could be accurately extracted, was esti...

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Published in:IEEE transactions on semiconductor manufacturing 2009-02, Vol.22 (1), p.146-152
Main Authors: Stavitski, N., Klootwijk, J.H., van Zeijl, H.W., Kovalgin, A.Y., Wolters, R.
Format: Article
Language:English
Subjects:
Applied sciences
Area measurement
Contact
Contact resistance
Cross-bridge Kelvin resistor (CBKR)
Data mining
Electrical resistance measurement
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Extraction
Geometry
Kelvin
Mathematical models
metal-to-metal contacts
Proximity effect
Resistors
Semiconductors
Shape
Sheet metal
specific contact resistance
Stacks
Testing
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cited_by cdi_FETCH-LOGICAL-c523t-e3a75d32160552b576342001298935536dd9e66c825302372577c413446f63823
cites cdi_FETCH-LOGICAL-c523t-e3a75d32160552b576342001298935536dd9e66c825302372577c413446f63823
container_end_page 152
container_issue 1
container_start_page 146
container_title IEEE transactions on semiconductor manufacturing
container_volume 22
creator Stavitski, N.
Klootwijk, J.H.
van Zeijl, H.W.
Kovalgin, A.Y.
Wolters, R.
description The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (¿ c ) have been extensively discussed during last few decades and the minimum of the ¿ c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-to-metal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable ¿ c extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used.
doi_str_mv 10.1109/TSM.2008.2010746
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source IEEE Electronic Library (IEL) Journals
subjects Applied sciences
Area measurement
Contact
Contact resistance
Cross-bridge Kelvin resistor (CBKR)
Data mining
Electrical resistance measurement
Electronic equipment and fabrication. Passive components, printed wiring boards, connectics
Electronics
Exact sciences and technology
Extraction
Geometry
Kelvin
Mathematical models
metal-to-metal contacts
Proximity effect
Resistors
Semiconductors
Shape
Sheet metal
specific contact resistance
Stacks
Testing
title Cross-Bridge Kelvin Resistor Structures for Reliable Measurement of Low Contact Resistances and Contact Interface Characterization
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