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Cross-Bridge Kelvin Resistor Structures for Reliable Measurement of Low Contact Resistances and Contact Interface Characterization
The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (¿ c ) have been extensively discussed during last few decades and the minimum of the ¿ c value, which could be accurately extracted, was esti...
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Published in: | IEEE transactions on semiconductor manufacturing 2009-02, Vol.22 (1), p.146-152 |
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Main Authors: | , , , , |
Format: | Article |
Language: | English |
Subjects: | |
Citations: | Items that this one cites Items that cite this one |
Online Access: | Get full text |
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Summary: | The parasitic factors that strongly influence the measurement accuracy of Cross-Bridge Kelvin Resistor (CBKR) structures for low specific contact resistances (¿ c ) have been extensively discussed during last few decades and the minimum of the ¿ c value, which could be accurately extracted, was estimated. We fabricated a set of various metal-to-metal CBKR structures with different geometries, i.e., shapes and dimensions, to confirm this limit experimentally and to create a method for contact metal-to-metal interface characterization. As a result, a model was developed to account for the actual current flow and a method for reliable ¿ c extraction was created. This method allowed to characterize metal-to-metal contact interface. It was found that in the case of ideal metal-to-metal contacts, the measured CBKR contact resistance was determined by the dimensions of the two-metal stack in the area of contact and sheet resistances of the metals used. |
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ISSN: | 0894-6507 1558-2345 |
DOI: | 10.1109/TSM.2008.2010746 |