Single Crystal Growth and Luminescence Properties of CeF -CaF Solid Solution Grown by the Micro-Pulling-Down Method

(Ce x Ca 1-x )F 2+x single crystal with x = 0.0001 - 0.03 were grown by the mu-PD method. Ce 3+ doping in CaF 2 lattice gives rise to characteristic absorption and emission bands, which are governed by the characteristics of the isolated Ce 3+ -F i - C 4v pair centers and small clusters composed fro...

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Bibliographic Details
Published in:IEEE transactions on nuclear science 2008-06, Vol.55 (3), p.1484-1487
Main Authors: Yoshikawa, A., Kyoung Jin Kim, Aoki, K., Kamada, K., Saito, F., Pejchal, J., Solovieva, N., Nikl, M.
Format: Article
Language:English
Subjects:
Calcium fluoride
Ce perturbed center
Clusters
Crystals
Decay
Doping
Educational technology
Electromagnetic wave absorption
Emission
Energy exchange
Energy transfer
fluoride
Lattices
Luminescence
Photoluminescence
Scintillation
scintillator
Shape
Single crystals
Solid solutions
Solids
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Summary:(Ce x Ca 1-x )F 2+x single crystal with x = 0.0001 - 0.03 were grown by the mu-PD method. Ce 3+ doping in CaF 2 lattice gives rise to characteristic absorption and emission bands, which are governed by the characteristics of the isolated Ce 3+ -F i - C 4v pair centers and small clusters composed from these pairs. With increasing Ce concentration there is a strong increase of the absorption bands related to the cluster centres, but the radioluminescence spectra are always governed by the emission of the isolated Ce 3+ -F i - C 4v pairs without noticeable changes in the emission band shape. Highest radioluminescence intensity is achieved for Ce 0.1{%} concentration and above 1{%} of Ce the onset of concentration quenching is observed. Scintillation response is governed by the energy transfer from the CaF 2 host lattice and even for the Ce3{%} sample the dominant scintillation decay time is about 50{%} longer with respect to the photoluminescence decay time of Ce 3+ -F i - C 4v pair centres. Energy transfer processes and the role of different Ce 3+ -based centers are discussed.
ISSN:0018-9499
1558-1578
DOI:10.1109/TNS.2008.924091