On the Accurate Measurement and Calibration of S-Parameters for Millimeter Wavelengths and Beyond

It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measurements are often inaccurate and suffer from serious systematic artifacts. In this paper, we confirm that these artifacts are related to spurious wave modes that are excited and propagate in the subst...

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Bibliographic Details
Published in:IEEE transactions on microwave theory and techniques 2015-07, Vol.63 (7), p.2335-2342
Main Authors: Seelmann-Eggebert, Matthias, Ohlrogge, Matthias, Weber, Rainer, Peschel, Detlef, Massler, Hermann, Riessle, Markus, Tessmann, Axel, Leuther, Arnulf, Schlechtweg, Michael, Ambacher, Oliver
Format: Article
Language:English
Subjects:
Calibration
Crosstalk
Deterioration
Frequency measurement
Joining
measurement techniques
Microwaves
millimeter wave
Probes
Radio frequency
Scattering parameters
Screening
Semiconductors
sub-millimeter wave
Substrates
Transmission line measurements
vector-network analyzer (VNA)
Wavelengths
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Summary:It is well known that, in the millimeter (mm-wave) and sub-mm-wave range, on-wafer S-parameter measurements are often inaccurate and suffer from serious systematic artifacts. In this paper, we confirm that these artifacts are related to spurious wave modes that are excited and propagate in the substrate. These parasitic wave components may be scattered at neighboring structures on the wafer and cause detrimental crosstalk. While these parasitic components deteriorate the measurement itself, an even more serious complication arises from the fact that these modes are already present in the calibration measurement and are unintentionally imported and superposed to the measurement data. In this paper, we present a new type of RF pad with novel screening features and show that these parasitic modes can be efficiently suppressed by the use of proper on-wafer couple structures. Moreover, a novel calibration substrate and method is presented and demonstrated to be capable to remove spurious artifacts from S-parameter measurements up to 450 GHz.
ISSN:0018-9480
1557-9670
DOI:10.1109/TMTT.2015.2436919